| PART |
Description |
Maker |
| IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
| GT30J341 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| SG50N06D3S SG50N06D2S |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
ETC[ETC]
List of Unclassifed Manufacturers
|
| IXBH16N170 IXBT16N170 |
Discrete IGBTs
|
IXYS
|
| SG12N06DP SG12N06P |
Discrete IGBTs
|
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| SG23N06DT SG23N06T |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| IXBF40N160 IXBF40N140 |
Discrete IGBTs
High Voltage BIMOSFET
|
IXYS Corporation
|
| SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
| HGTD8P50G1S HGTD8P50G1 HGTP8P50G1 |
8A, 500V P-Channel IGBTs
8A 500V P-Channel IGBTs
Mechanism, 2-inch w/front paper feed and partial cutter
8A/ 500V P-Channel IGBTs
|
http://
INTERSIL[Intersil Corporation]
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
